upa2510tm Renesas Electronics Corporation., upa2510tm Datasheet - Page 5

• Manufacturer Part Number: upa2510tm
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

1000
0.01
100
100
0.1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
10
25
20
15
10
1
1
5
0
-0.1
-50
0.4
V
Pulsed
I
Pulsed
D
GS
SWITCHING CHARACTERISTICS
= −9.0 A
V
F(S-D)
= 0 V
T
ch
V
GS
- Channel Temperature - °C
0.6
0
- Source to Drain Voltage - V
I
= −4.5 V
D
−10.0 V
- Drain Current - A
-1
0.8
50
-10
V
V
R
DD
GS
G
100
= 10 Ω
1
= −15.0 V
= −10.0 V
t
t
t
t
d(off)
f
r
d(on)
Data Sheet G16683EJ1V0DS
-100
150
1.2
10000
-100
1000
-10
-0.1
-10
100
-8
-6
-4
-2
-1
0
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0.01
0
-0.1
I
AS
V
I
V
R
V
Starting T
DYNAMIC INPUT CHARACTERISTICS
D
V
f = 1.0 MHz
DD
DD
GS
G
10
= −18.0 A
= − 18.0 A
GS
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
= 25 Ω
= − 24.0 V
= −15.0 V
= −20.0 → 0 V
V
= 0 V
DS
20
L - Inductive Load - mH
- Drain to Source Voltage - V
Q
ch
G
0.1
= 25°C
- Gate Charge - nC
-1
30
40
50
E
1
-10
AS
60
= 32.4 mJ
µ
70
C
C
C
PA2510
oss
rss
iss
10
80
-100
5