upa2510tm Renesas Electronics Corporation., upa2510tm Datasheet - Page 4

• Manufacturer Part Number: upa2510tm
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
-1.8
-1.6
-1.4
-1.2
-0.8
-80
-60
-40
-20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
25
20
15
10
-2
-1
0
5
0
-0.1
-50
0
Pulsed
Pulsed
V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
GS
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
-0.2
ch
= −10.0 V
- Drain to Source Voltage - V
V
- Channel Temperature - °C
0
GS
I
D
= −4.5 V
- Drain Current - A
-1
−10.0 V
-0.4
50
-0.6
−4.5 V
-10
V
I
D
DS
= −1.0 mA
100
= −10.0 V
-0.8
Data Sheet G16683EJ1V0DS
-100
150
-1
0.01
-0.001
100
0.1
-0.01
10
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
20
15
10
-0.1
1
-10
5
0
-0.01
-1
0
-0.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
FORWARD TRANSFER CHARACTERISTICS
V
Pulsed
DS
V
Pulsed
DS
V
= −10.0 V
GS
= − 10.0 V
V
-1
GS
-0.1
- Gate to Source Voltage - V
-5
I
- Gate to Source Voltage - V
D
- Drain Current - A
-1.5
-10
-1
T
-2
A
= −25°C
125°C
25°C
75°C
-2.5
T
A
I
Pulsed
-10
-15
D
= 125°C
= −9.0 A
− 25°C
µ
75°C
25°C
-3
PA2510
-100
-20
-3.5