upa2510tm Renesas Electronics Corporation., upa2510tm Datasheet - Page 3

• Manufacturer Part Number: upa2510tm
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
-1000
-0.01
-100
120
100
-0.1
-10
80
60
40
20
-1
0
-0.1
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
Single pulse
Mounted on FR-4 board of 25 cm
R
(at V
DS(on)
25
V
GS
T
DS
Limited
= −10 V)
A
- Ambient Temperature - °C
- Drain to Source Voltage - V
I
D(DC)
1000
50
100
0.1
10
1
-1
1 m
I
D(pulse)
75
100
2
10 m
x 1.6 mm
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
-10
125
PW = 1 ms
A
= 25°C)
150
10 ms
30 ms
10 s
100 m
Data Sheet G16683EJ1V0DS
175
-100
PW - Pulse Width - s
Single pulse
Mounted on FR-4 board of 25 cm
1
2.5
1.5
0.5
3
2
1
0
10
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
- Ambient Temperature - °C
100
Mounted on FR-4 board of
25 cm
50
2
x 1.6 mm
2
75
x 1.6 mm, PW ≤ 10 sec
100
1000
125 150
µ
PA2510
175
3