h55s1g32mfp-60 Hynix Semiconductor, h55s1g32mfp-60 Datasheet - Page 35

• Manufacturer Part Number: h55s1g32mfp-60
• Description: 32mx32bit Mobile Sdram
• Manufacturer: Hynix Semiconductor

Com m and
D M
CLK
Address
DQ
WRITE to WRITE
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case,
a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive edge of
the clock following the previous WRITE command. The first data-in element from the new burst is applied after either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The
new WRITE command should be issued X cycles after the first WRITE command, where X equals the number of
desired data-in element.
Command
Rev 1.2 / Jun. 2008
Address
CLK
DM
DQ
W RITE
BA, Col
WRITE
BA, Col
D
D
b
I
I
b
b0
b
D
D
I
I
b1
b'
W RITE
BA, Col
D
D
I
x
I
b2
x
D
D
I
I
b3
Concatenated Write Bursts
x’
Random Write Cycles
WRITE
W RITE
BA, Col
BA, Col
D
D
I
n0
n
n
I
n
D
D
1Gbit (32Mx32bit) Mobile SDR Memory
I
n1
I
n’
W RITE
BA, Col
D
I
D
n2
a
I
a
D
CL = 2 or 3
H55S1G(2/3)2MFP Series
I
D
n3
CL = 2 or 3
I
a’
W RITE
BA, Col
D
g
I
g
D
I
g’
Don't Care
Don't Care
NOP
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