FM22LD16_09 RAMTRON [Ramtron International Corporation], FM22LD16_09 Datasheet - Page 10

• Manufacturer Part Number: FM22LD16_09
• Description: 4Mbit F-RAM Memory
• Manufacturer: RAMTRON [Ramtron International Corporation]

Power Cycle Timing (T
Notes
1
2
Data Retention (V
AC Test Conditions
Input Pulse Levels
Input Rise and Fall Times
Read Cycle Timing 1 (/CE low, /OE low)
Read Cycle Timing 2 (/CE-controlled)
Rev. 2.0
Dec. 2009
Symbol
t
t
t
t
Data Retention
PU
PD
VR
VF
Slope measured at any point on V
Ramtron cannot test or characterize all V
when V
100ms through the range of 0.4V to 1.0V.
DD
DQ(15:0)
UB / LB
A(17:0)
OE
CE
is below the level of a transistor threshold voltage. Ramtron strongly recommends that V
Parameter
Power-Up (after V
Last Write (/WE high) to Power Down Time
V
V
DD
DD
Rise Time
Fall Time
DD
= 2.7V to 3.6V)
A
Parameter
= -40 C to + 85 C, V
t
AS
0 to 3V
3 ns
DD
DD
min. is reached) to First Access Time
waveform.
t
CE
DD
power ramp profiles. The behavior of the internal circuits is difficult to predict
t
BA
DD
t
OE
t
= 2.7V to 3.6V unless otherwise specified)
AH
t
CA
Input and Output Timing Levels
Output Load Capacitance
Min
10
Min
450
100
50
Units
Years
0
t
OH
FM22LD16 - 256Kx16 FRAM
t
OHZ
t
t
HZ
BHZ
t
Max
PC
1.5V
30pF
-
-
-
-
Notes
DD
power up faster than
Units
s/V
s/V
s
s
Page 10 of 14
Notes
1,2
1,2