IDT72V2101 IDT [Integrated Device Technology], IDT72V2101 Datasheet - Page 23

• Manufacturer Part Number: IDT72V2101
• Description: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO
• Manufacturer: IDT [Integrated Device Technology]

NOTES:
1. m = PAF offset .
2. D = maximum FIFO depth.
3. t
4. PAF is asserted and updated on the rising edge of WCLK only.
NOTE:
1. OE = LOW
D
Q
WCLK
RCLK
IDT72V2101/72V2111 3.3V HIGH DENSITY CMOS
SUPERSYNC FIFO
WCLK
WEN
0
RCLK
0
REN
In IDT Standard mode: D = 262,144 for the IDT72V2101 and 524,288 for the IDT72V2111.
In FWFT mode: D = 262,145 for the IDT72V2101 and 524,289 for the IDT72V2111.
RCLK and the rising edge of WCLK is less than t
PAF
WEN
SKEW2
REN
- D
- Q
LD
LD
7
7
is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that PAF will go HIGH (after one WCLK cycle plus t
t
CLKH
DATA IN OUTPUT REGISTER
PAE OFFSET
t
t
CLKH
CLKH
(LSB)
TM
t
CLK
t
CLK
262,144 x 9, 524,288 x 9
t
t
t
ENS
t
ENS
LDS
t
LDS
Figure 14. Parallel Loading of Programmable Flag Registers (IDT Standard and FWFT Modes)
DS
t
Figure 15. Parallel Read of Programmable Flag Registers (IDT Standard and FWFT Modes)
t
ENS
t
CLKL
CLKL
Figure 16. Programmable Almost-Full Flag Timing (IDT Standard and FWFT Modes)
D - (m+1) words in FIFO
t
t
CLKL
A
t
t
ENH
t
t
PAE OFFSET
LDH
t
ENH
DH
(MID-BYTE)
t
LDH
ENH
SKEW2
, then the PAF deassertion time may be delayed one extra WCLK cycle.
PAE OFFSET
(LSB)
1
(2)
PAE OFFSET
(MSB)
P A E O F F S E T
( M I D - B Y T E )
2
23
t
PAF
PAF OFFSET
(LSB)
t
ENS
PAE OFFSET
t
SKEW2
(MSB)
(3)
PAF OFFSET
(MID-BYTE)
t
ENH
D - m words in FIFO
PAF OFFSET
1
(LSB)
COMMERCIAL AND INDUSTRIAL
PAF OFFSET
(2)
PAF
(MSB)
). If the time between the rising edge of
PAF OFFSET
(MID-BYTE)
TEMPERATURE RANGES
2
t
PAF
t
A
t
t
t
ENH
LDH
t
ENH
LDH
t
DH
D-(m+1) words
in FIFO
PAF OFFSET
4669 drw 19
4669 drw 17
4669 drw 18
(MSB)
(2)