buk454-200b NXP Semiconductors, buk454-200b Datasheet - Page 4

• Manufacturer Part Number: buk454-200b
• Description: Buk454-200a/b Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
February 1996
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
I
D
Fig.8. Typical transconductance, T
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
20
15
10
= f(V
6
5
4
3
2
1
0
5
0
0
-60
Fig.7. Typical transfer characteristics.
0
DS(ON)
0
gfs / S
a
ID / A
GS
g
2
) ; conditions: V
fs
/R
-20
= f(I
DS(ON)25 ˚C
4
2
D
); conditions: V
6
Tj / C =
20
= f(T
8
4
VGS / V
ID / A
Tj / C
10
60
DS
j
); I
Normalised RDS(ON) = f(Tj)
= 25 V; parameter T
12
D
6
= 3.5 A; V
25
100
DS
14
= 25 V
BUK454-200A
BUK454-200A
16
8
140
j
= 25 ˚C .
GS
18
150
= 10 V
20
180
10
j
4
V
Fig.12. Typical capacitances, C
10000
C = f(V
4
3
2
1
0
GS(TO)
I
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
D
-60
100
VGS(TO) / V
= f(V
10
Fig.11. Sub-threshold drain current.
0
C / pF
0
Fig.10. Gate threshold voltage.
ID / A
= f(T
GS)
DS
-20
); conditions: V
; conditions: T
j
); conditions: I
1
20
2 %
max.
typ.
min.
20
Tj / C
SUB-THRESHOLD CONDUCTION
VDS / V
60
2
VGS / V
j
GS
= 25 ˚C; V
D
BUK454-200A/B
= 1 mA; V
= 0 V; f = 1 MHz
typ
100
Product Specification
3
iss
, C
140
BUK4y4-200
98 %
40
DS
DS
oss
= V
4
Ciss
Coss
Crss
, C
= V
Rev 1.000
180
GS
rss
GS
.