buk454-200b NXP Semiconductors, buk454-200b Datasheet - Page 5

• Manufacturer Part Number: buk454-200b
• Description: Buk454-200a/b Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
February 1996
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
I
F
GS
20
15
10
12
10
= f(V
5
0
8
6
4
2
0
= f(Q
Fig.14. Typical reverse diode current.
0
IF / A
0
VGS / V
SDS
G
Tj / C = 150
); conditions: I
); conditions: V
4
8
12
VSDS / V
QG / nC
D
1
GS
16
= 9 A; parameter V
25
= 0 V; parameter T
VDS / V =40
20
BUK454-200A
BUK454-200
160
24
28
2
DS
j
5
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
20
WDSS%
W
W
DSS
DSS
40
RGS
% = f(T
0.5 LI
60
mb
80
D
); conditions: I
2
BV
Tmb / C
100
DSS
L
BUK454-200A/B
VDS
120
BV
T.U.T.
Product Specification
DSS
140
D
shunt
R 01
= 9 A
V
DD
160
-
+
Rev 1.000
-ID/100
180
VDD