buk454-200 NXP Semiconductors, buk454-200 Datasheet - Page 3

• Manufacturer Part Number: buk454-200
• Description: Buk444-200a/b Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
AVALANCHE LIMITING VALUE
T
April 1993
PowerMOS transistor
hs
SYMBOL PARAMETER
W
ID% = 100 I
= 25 ˚C unless otherwise specified
DSS
Fig.2. Normalised continuous drain current.
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
PD% = 100 P
20
D
20
/I
D 25 ˚C
40
40
= f(T
60
60
hs
D
Ths / C
Ths / C
/P
with heatsink compound
); conditions: V
Normalised Current Derating
80
D 25 ˚C
80
Normalised Power Derating
with heatsink compound
100
100
= f(T
hs
120
120
)
GS
140
140
CONDITIONS
I
V
D
10 V
GS
= 9 A ; V
= 10 V ; R
3
DD
GS
100 V ;
= 50
I
0.01
100
0.1
D
0.1
10
10
1
1
& I
1E-07
Fig.3. Safe operating area. T
1
ID / A
Fig.4. Transient thermal impedance.
Zth / (K/W)
D =
DM
0.05
0.02
0.5
0.2
0.1
Z
= f(V
0
th j-hs
1E-05
DS
10
= f(t); parameter D = t
); I
DC
DM
MIN.
single pulse; parameter t
VDS / V
-
1E-03
100
t / s
B
A
P
D
BUK444-200A/B
TYP.
1 ms
10 ms
100 ms
100 us
tp = 10 us
Product Specification
-
t
p
T
1E-01
1000
BUK444-200A,B
hs
D =
= 25 ˚C
p
MAX.
/T
BUKx44-lv
50
T
t
p
t
Rev 1.100
10000
1E+01
UNIT
mJ
p