buk454-200 NXP Semiconductors, buk454-200 Datasheet - Page 5

• Manufacturer Part Number: buk454-200
• Description: Buk444-200a/b Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
April 1993
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
Fig.12. Typical capacitances, C
GS
10000
I
C = f(V
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
12
10
1000
D
8
6
4
2
0
100
= f(Q
= f(V
10
Fig.11. Sub-threshold drain current.
0
VGS / V
0
C / pF
0
ID / A
G
GS)
DS
); conditions: I
4
); conditions: V
; conditions: T
1
8
12
2 %
20
QG / nC
SUB-THRESHOLD CONDUCTION
VDS / V
VGS / V
2
D
16
j
= 9 A; parameter V
GS
= 25 ˚C; V
= 0 V; f = 1 MHz
typ
VDS / V =40
20
3
iss
BUK454-200
, C
160
24
BUK4y4-200
98 %
40
DS
oss
= V
4
Ciss
Coss
Crss
, C
28
GS
rss
DS
.
5
VGS
0
I
Fig.15. Normalised avalanche energy rating.
F
20
15
10
120
110
100
= f(V
5
0
90
80
70
60
50
40
30
20
10
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
0
IF / A
20
WDSS%
W
W
SDS
DSS
DSS
Tj / C = 150
); conditions: V
RGS
% = f(T
40
0.5 LI
60
hs
); conditions: I
D
2
VSDS / V
BV
80
Ths / C
1
GS
DSS
25
L
BUK444-200A/B
= 0 V; parameter T
VDS
100
BV
T.U.T.
Product Specification
DSS
D
BUK454-200A
120
shunt
= 9 A
R 01
V
DD
-
+
140
Rev 1.100
-ID/100
VDD
2
j