MCR100-003G ONSEMI [ON Semiconductor], MCR100-003G Datasheet

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MCR100-003G

Manufacturer Part Number
MCR100-003G
Description
Sensitive Gate Silicon Controlled Rectifiers
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
MCR100 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
*For additional information on our Pb−Free strategy and soldering details, please
January, 2005 − Rev. 6
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Logic Circuits
for Ease of Design
Sensitive Gate Allows Triggering by Microcontrollers and Other
Blocking Voltage to 600 V
On−State Current Rating of 0.8 Amperes RMS at 80 C
High Surge Current Capability − 10 A
Minimum and Maximum Values of IGT, VGT and IH Specified
Immunity to dV/dt − 20 V/msec Minimum at 110 C
Glass-Passivated Surface for Reliability and Uniformity
Pb−Free Packages are Available*
Semiconductor Components Industries, LLC, 2005
PNPN devices designed for high volume, line-powered consumer
Preferred Device
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
2
1
2
3
3
ORDERING INFORMATION
x
A
Y
WW
A
100 thru 600 V
http://onsemi.com
PIN ASSIGNMENT
TO−92 (TO−226)
0.8 A RMS
CASE 029
STYLE 10
= Specific Device Code
= Assembly Location
= Year
= Work Week
SCRs
Publication Order Number:
Cathode
Anode
Gate
G
MARKING
DIAGRAM
K
MCR
100−x
AYWW
MCR100/D

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MCR100-003G Summary of contents

Page 1

... MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment ...

Page 2

... DRM RRM voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. MCR100 Series Package Code TO−92 (TO−226 (TO 226) 2000 Units / Tape & Ammunition Box 2000 Units / Tape & ...

Page 3

... Peak Repetitive Off State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak on State Voltage TM I Holding Current H MCR100 Series = 25 C unless otherwise noted) C Symbol DRM 110 ...

Page 4

... Figure 3. Typical Holding Current versus Junction Temperature 120 110 100 0.1 0.2 0 RMS ON-STATE CURRENT (AMPS) T(RMS) Figure 5. Typical RMS Current Derating MCR100 Series 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 110 −40 −25 − Figure 2. Typical Gate Trigger Voltage versus 1000 100 ...

Page 5

... Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive more than 1 consecutive missing component is permitted tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. MCR100 Series H2A H2A W2 ...

Page 6

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MCR100 Series PACKAGE DIMENSIONS TO−92 (TO−226) CASE 029−11 ISSUE AL ...

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