k7q161882a-fc15 Samsung Semiconductor, Inc., k7q161882a-fc15 Datasheet - Page 11

• Manufacturer Part Number: k7q161882a-fc15
• Description: 512kx36 & 1mx18 Qdr B2 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7Q161882A
K7Q163682A
THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
AC TEST CONDITIONS
Note: Parameters are tested with RQ=250
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250 and V
APPLICATION INRORMATION
Output Power Supply Voltage
Output Timing Reference Level
Junction to Ambient
Junction to Case
Junction to Pins
MEMORY
CONTROLLER
Core Power Supply Voltage
Input High/Low Level
Input Reference Level
Input Rise/Fall Time
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
thermal impedance. T
2. Periodically sampled and not 100% tested.
Source CLK
Source CLK
Return CLK
Return CLK
Parameter
Data Out
Address
PRMETER
Data In
PRMETER
BW0-7
W
R
J
=T
A
Vt
+ P
R
R=50 Vt=V
D
x
JA
Vt
Vt
Symbol
V
T
V
V
V
IH
D
SA
R
DDQ
REF
DD
/T
/V
0-17
F
IL
REF
R W BW
DDQ
SYMBOL
1.25/0.25
1.7~1.9
1.4~1.9
V
0.3/0.3
=1.5V.
Value
C
C
0.75
DDQ
C
OUT
CLK
IN
SRAM#1
SYMBOL
/2
1Mx18
0
JC
JA
JB
BW
Unit
ns
V
V
V
V
V
1
- 11 -
TESTCONDITION
512Kx36 & 1Mx18 QDR
C C
V
V
Q
OUT
K
IN
ZQ
0-17
=0V
-
K
=0V
R=250
AC TEST OUTPUT LOAD
SRAM
TYP
24.0
2.8
5.5
MIN
D
SA
R
4
6
5
V
0-17
REF
ZQ
Vt
Vt
RW BW
250
0.75V
MAX
5
7
6
SRAM#4
0
Zo=50
Unit
C
C
C
TM
BW
/W
/W
/W
Unit
pF
pF
pF
1
b2 SRAM
C C
V
Q
NOTES
NOTES
July 2002
K
DD
ZQ
0-17
Rev 1.0
K
Q/2
50
R=250