k7q161882a-fc15 Samsung Semiconductor, Inc., k7q161882a-fc15 Datasheet - Page 9

• Manufacturer Part Number: k7q161882a-fc15
• Description: 512kx36 & 1mx18 Qdr B2 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7Q161882A
K7Q163682A
ABSOLUTE MAXIMUM RATINGS*
*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
DC ELECTRICAL CHARACTERISTICS
Notes: 1. Minimum cycle. I
Voltage on V
Voltage on V
Voltage on Input Pin Relative to V
Power Dissipation
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
Input Leakage Current
Output Leakage Current
Operating Current (x18) : DDR
Operating Current (x36) : DDR
Standby Current(NOP) : DDR
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Input Low Voltage
Input High Voltage
10. V
2. V
8. These are DC test criteria. DC design criteria is V
9. V
2. |I
3. |I
4. Minimum Impedance Mode when ZQ pin is connected to V
5. Operating current is calculated with 50% read cycles and 50% write cycles.
6. Standby Current is only after all pending read and write burst opeactions are completed.
7. Programmable Impedance Mode.
only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DDQ
IL
timing parameters.
IH
OH
OL
(Min)DC=
PARAMETER
|=(V
(Max)DC=
|=(V
must not exceed V
DD
DDQ
DDQ
DDQ
Supply Relative to V
Supply Relative to V
/2)/(RQ/5) 15% @V
/2)/(RQ/5) 15% @V
-
0.3V, V
V
DDQ
OUT
PARAMETER
+0.3, V
=0mA.
IL
(Min)AC=-1.5V(pulse width
DD
during normal operation.
IH
(Max)AC=
SS
OL
OH
SS
SYMBOL
=V
SS
=V
V
V
V
V
I
V
DDQ
I
I
I
V
SB1
DDQ
I
CC
CC
OH1
OH2
OL
OL1
OL2
IL
IH
IL
V
/2 for 175
/2 for 175
DDQ
+0.85V(pulse width
V
Output Disabled,
V
Cycle Time
V
Cycle Time
Device deselected, I
f=Max,
All Inputs 0.2V or
I
I
OH
OL
DD
DD
DD
REF
=1.0mA
=-1.0mA
=Max ; V
=Max , I
=Max , I
3ns).
50mV. The AC V
(V
RQ
RQ
DD
TEST CONDITIONS
SS
=1.8V 0.1V, T
OUT
OUT
350 .
IN
350 .
.
t
t
KHKH
KHKH
=V
- 9 -
=0mA
=0mA
512Kx36 & 1Mx18 QDR
SS
3ns).
Min
Min
OUT
to V
V
IH
SYMBOL
DD
/V
V
T
T
T
V
=0mA,
V
IL
P
BIAS
DDQ
-0.2V
DDQ
STG
OPR
DD
IN
levels are defined separately for measuring
D
A
=0 C to +70 C)
-15
-13
-10
-15
-13
-10
-15
-13
-10
V
V
V
-0.5 to V
REF
DDQ
MIN
DDQ
V
V
-0.3
-0.5 to V
-2
-2
-0.5 to 2.9
-65 to 150
-
-
-
-
-
-
-
-
-
SS
SS
-10 to 85
RATING
+0.1
-0.2
0 to 70
/2
1.8
DD+
DD
V
V
0.3
V
DDQ
REF
MAX
V
V
DDQ
480
440
390
510
470
420
210
200
190
0.2
+2
+2
DDQ
DDQ
+0.3
-0.1
TM
/2
b2 SRAM
UNIT NOTES
mA
mA
mA
V
V
V
V
V
V
A
A
UNIT
W
July 2002
V
V
V
C
C
C
Rev 1.0
8,10
1,5
1,5
1,6
2,7
3,7
8,9
4
4