2SJ537_06 TOSHIBA [Toshiba Semiconductor], 2SJ537_06 Datasheet
2SJ537_06
Related parts for 2SJ537_06
2SJ537_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I = −100 μA (V DSS Enhancement−mode : V = ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...
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I – −5 −5 Common −10 source Ta = 25°C −4 Pulse Test −3 −8 −6 −2 − −2.5V 0 −0.4 −0.8 −1.2 −1.6 0 Drain-source voltage V DS (V) I – ...
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(ON) 1.0 Common source Pulse Test 0.8 0.6 1 2.5A 0 0.2 −2.5 −1 −80 − 120 Ambient ...
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Single Pulse 0.001 100μ 1m SAFE OPERATING AREA −100 I max (pulse)* D −10 I max (continuous −1 DC OPEATION T =25°C a ※ Single pulse −0.1 Ta=25℃ Curves must be derated ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...