2SJ537_09 TOSHIBA [Toshiba Semiconductor], 2SJ537_09 Datasheet
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2SJ537_09
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2SJ537_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I = −100 μA (V DSS Enhancement mode : V ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...
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I – −5 −5 Common −10 source Ta = 25°C −4 Pulse Test −3 −8 −6 −2 − −2.5V 0 −0.4 −0.8 −1.2 −1.6 0 Drain-source voltage V DS (V) I – ...
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(ON) 1.0 Common source Pulse Test 0.8 0.6 1 2.5A 0 0.2 −2.5 −1 −80 − 120 Ambient ...
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Single Pulse 0.001 100μ 1m SAFE OPERATING AREA −100 I max (pulse)* D −10 I max (continuous −1 DC OPEATION T =25°C a ※ Single pulse −0.1 Ta=25℃ Curves must be derated ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...