BZT52H PHILIPS [NXP Semiconductors], BZT52H Datasheet - Page 6

• Manufacturer Part Number: BZT52H
• Description: Single Zener diodes in a SOD123F package
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
9397 750 15082
Product data sheet
Fig 1. Non-repetitive peak reverse power dissipation
Fig 3. Temperature coefficient as a function of
(mV/K)
P
(1) T
(2) T
S
(W)
ZSM
Z
10
10
10
0
1
2
3
1
10
3
2
as a function of pulse duration; maximum
values
BZT52H-C2V4 to BZT52H-C4V3
T
working current; typical values
0
j
j
j
= 25 C (prior to surge)
= 150 C (prior to surge)
= 25 C to 150 C
1
20
1
(1)
(2)
4V3
40
t
p
3V9
2V4
2V7
(ms)
3V3
I
3V6
Z
(mA)
mbg801
mbg783
3V0
Rev. 01 — 22 December 2005
10
60
Fig 2. Forward current as a function of forward
Fig 4. Temperature coefficient as a function of
(mV/K)
(mA)
S
I
F
Z
300
200
100
10
0
5
0
5
T
voltage; typical values
BZT52H-C4V7 to BZT52H-C12
T
working current; typical values
0.6
0
Single Zener diodes in a SOD123F package
j
j
= 25 C
= 25 C to 150 C
4
8
BZT52H series
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
9V1
8V2
7V5
6V8
0.8
12
11
10
12
6V2
5V6
5V1
4V7
16
I
V
Z
mbg781
mbg782
F
(mA)
(V)
20
1
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