74HC2G14GW,125 NXP Semiconductors, 74HC2G14GW,125 Datasheet
74HC2G14GW,125
Specifications of 74HC2G14GW,125
74HC2G14GW-G
935281021125
Related parts for 74HC2G14GW,125
74HC2G14GW,125 Summary of contents
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Dual inverting Schmitt trigger Rev. 01 — 11 October 2006 1. General description The 74HC2G14; 74HCT2G14 is a high-speed Si-gate CMOS device. The 74HC2G14; 74HCT2G14 provides two inverting buffers with Schmitt trigger action which accept standard input signals. ...
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... NXP Semiconductors 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name 74HC2G14GW +125 C 74HC2G14GV +125 C 74HCT2G14GW +125 C 74HCT2G14GV +125 C 5. Marking Table 2. Marking Type number 74HC2G14GW 74HC2G14GV 74HCT2G14GW 74HCT2G14GV 6. Functional diagram mnb082 Fig 1. Logic symbol 7. Pinning information 7.1 Pinning Fig 4. Pin confi ...
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... NXP Semiconductors 7.2 Pin description Table 3. Pin description Symbol Pin 1A 1 GND Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). ...
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... NXP Semiconductors 10. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter Type 74HC2G14 V supply voltage CC V input voltage I V output voltage O T ambient temperature amb Type 74HCT2G14 V supply voltage CC V input voltage I V output voltage O T ambient temperature amb 11. Static characteristics Table 7 ...
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... NXP Semiconductors Table 7. Static characteristics for 74HC2G14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I supply current +125 C amb V HIGH-level output voltage OH V LOW-level output voltage ...
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... NXP Semiconductors Table 8. Static characteristics for 74HCT2G14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I supply current CC I additional supply current CC C input capacitance +85 C amb ...
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... NXP Semiconductors 12. Dynamic characteristics Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter 74HC2G14 t propagation delay pd t transition time t C power dissipation PD capacitance 74HCT2G14 t propagation delay pd t transition time t C power dissipation PD capacitance [ the same as t ...
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... NXP Semiconductors 13. Waveforms Measurement points are given in V and V are typical voltage output drop that occur with the output load Fig 5. The data input (nA) to output (nY) propagation delays and output transition times Table 10. Measurement points Type Input V M 74HC2G14 0.5V CC 74HCT2G14 1 ...
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... NXP Semiconductors 14. Transfer characteristics Table 12. Transfer characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter 74HC2G14 V positive-going T+ threshold voltage V negative-going T threshold voltage V hysteresis voltage H 74HCT2G14 V positive-going T+ threshold voltage V negative-going T threshold voltage V hysteresis voltage H 74HC_HCT2G14_1 Product data sheet ...
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... NXP Semiconductors 15. Waveforms transfer characteristics Fig 7. Transfer characteristic 74HC_HCT2G14_1 Product data sheet 74HC2G14; 74HCT2G14 mna207 Fig 8. Definition of V Rev. 01 — 11 October 2006 Dual inverting Schmitt trigger mna208 , V and © NXP B.V. 2006. All rights reserved ...
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... NXP Semiconductors 100 Fig 9. Typical 74HC2G14 transfer characteristics 74HC_HCT2G14_1 Product data sheet 74HC2G14; 74HCT2G14 mna028 1 (mA) 0.8 0.6 0.4 0.2 2 (mA) 0 3.0 V Rev. 01 — 11 October 2006 Dual inverting Schmitt trigger 0 0 2 mna030 6.0 (V) I © NXP B.V. 2006. All rights reserved. ...
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... NXP Semiconductors 2 (mA Fig 10. Typical 74HCT2G14 transfer characteristics 16. Application information The slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula add additional power dissipation ( W); add f = input frequency (MHz input rise time (ns input fall time (ns ...
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... NXP Semiconductors (1) Positive-going edge. (2) Negative-going edge. Fig 11 function of V CC(AV) (1) Positive-going edge. (2) Negative-going edge. Fig 12 function of V CC(AV) 74HC_HCT2G14_1 Product data sheet 74HC2G14; 74HCT2G14 200 I CC(AV) (mA) 150 positive-going 100 50 negative-going 0 0 2.0 4.0 for 74HC2G14; linear change 200 I CC(AV 150 positive-going ...
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... NXP Semiconductors --------------------- - For 74HC2G14 For 74HCT2G14: T Fig 13. Relaxation oscillator 74HC_HCT2G14_1 Product data sheet 74HC2G14; 74HCT2G14 R C mna035 ------------------------ - 0.67 RC Rev. 01 — 11 October 2006 Dual inverting Schmitt trigger © NXP B.V. 2006. All rights reserved ...
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... NXP Semiconductors 17. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 14. Package outline SOT363 (SC-88) 74HC_HCT2G14_1 Product data sheet scale 2.2 1.35 2 ...
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... NXP Semiconductors Plastic surface-mounted package (TSOP6); 6 leads y 6 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT 0.1 0.40 1.1 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 Fig 15. Package outline SOT457 (SC-74) 74HC_HCT2G14_1 Product data sheet scale 3.1 1.7 3 ...
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... NXP Semiconductors 18. Abbreviations Table 13. Abbreviations Acronym Description CMOS Complementary Metal Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model DUT Device Under Test 19. Revision history Table 14. Revision history Document ID Release date 74HC_HCT2G14_1 20061011 74HC_HCT2G14_1 Product data sheet 74HC2G14; 74HCT2G14 ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors 22. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Functional description . . . . . . . . . . . . . . . . . . . 3 9 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 13 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 14 Transfer characteristics ...