MTD10N10ELT4G ONSEMI [ON Semiconductor], MTD10N10ELT4G Datasheet - Page 3

• Manufacturer Part Number: MTD10N10ELT4G
• Description: TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
• Manufacturer: ONSEMI [ON Semiconductor]

0.35
0.25
0.15
0.05
20
15
10
5
0
1.5
0.5
1
0
0
2
− 50
0
T
Figure 3. On−Resistance versus Drain Current
J
V
I
V
D
= 25°C
GS
GS
= 5 A
Figure 5. On−Resistance Variation with
− 25
= 5 V
= 10 V
Figure 1. On−Region Characteristics
V
DS
1
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
T
0
J
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
and Temperature
25
2
Temperature
100°C
T
−55°C
J
= 25°C
10
50
V
GS
TYPICAL ELECTRICAL CHARACTERISTICS
= 10 V
3
75
15
100
4
7 V
125
http://onsemi.com
4.5 V
3.5 V
MTD10N10EL
5 V
4 V
3 V
2 V
5
150
20
3
0.25
0.15
100
0.2
0.1
10
20
15
10
1
5
0
0
0
1
Figure 4. On−Resistance versus Drain Current
V
V
T
GS
DS
J
= 25°C
= 0 V
≥ 5 V
Figure 6. Drain−To−Source Leakage
V
Figure 2. Transfer Characteristics
V
DS
20
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
2
Current versus Voltage
I
D
and Gate Voltage
, DRAIN CURRENT (AMPS)
40
T
V
J
100°C
GS
= 125°C
10 V
10
= 5 V
3
25°C
60
−55°C
15
4
80
T
J
= 100°C
1