PSMN005-55P PHILIPS [NXP Semiconductors], PSMN005-55P Datasheet - Page 4

• Manufacturer Part Number: PSMN005-55P
• Description: N-channel logic level TrenchMOS transistor
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
100
1000
100
ID% = 100 I
90
80
70
60
50
40
30
20
10
100
90
80
70
60
50
40
30
20
10
0
10
0
I
Fig.2. Normalised continuous drain current.
1
D
0
0
1
Normalised Current Derating, ID (%)
& I
Normalised Power Derating, PD (%)
Fig.3. Safe operating area. T
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
Fig.1. Normalised power dissipation.
DM
25
25
= f(V
PD% = 100 P
D
Mounting Base temperature, Tmb (C)
Mounting Base temperature, Tmb (C)
/I
D 25 ˚C
DS
Drain-Source Voltage, VDS (V)
50
50
); I
DM
= f(T
single pulse; parameter t
75
75
D.C.
D
mb
/P
10
); conditions: V
D 25 ˚C
100
100
= f(T
125
125
mb
mb
= 25 ˚C
)
tp = 10 us
150
150
GS
10 ms
100 us
1 ms
100 ms
5 V
100
p
175
175
transistor
4
ID/A
0.001
Fig.5. Typical output characteristics, T
0.01
Fig.6. Typical on-state resistance, T
400
300
200
100
0.1
8.5
7.5
6.5
5.5
1
1E-06
0
8
7
6
5
0
0
RDS(ON)/mOhm
Transient thermal impedance, Zth j-mb (K/W)
VGS/V =
10.0
7.0
6.0
0.2
0.1
Fig.4. Transient thermal impedance.
0.05
D = 0.5
0.02
single pulse
PSMN005-55B, PSMN005-55P
Z
3.0
3.2
3.4
3.6
4.0
5.0
1E-05
th j-mb
20
2
5.0
= f(t); parameter D = t
1E-04
4.6
4.8
R
Pulse width, tp (s)
I
DS(ON)
D
40
4
= f(V
ID/A
1E-03
VDS/D
4.4
= f(I
DS
60
)
D
P
D
6
)
1E-02
Product specification
VGS\V =
tp
T
80
D = tp/T
p
1E-01
/T
j
8
j
= 25 ˚C .
= 25 ˚C .
Rev 1.200
1E+00
100
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
10