PSMN005-55P PHILIPS [NXP Semiconductors], PSMN005-55P Datasheet - Page 6

• Manufacturer Part Number: PSMN005-55P
• Description: N-channel logic level TrenchMOS transistor
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
IF/A
I
100
F
0
80
60
40
20
Gate-source voltage, VGS (V)
= f(V
0
ID = 75 A
0
Tj = 25 C
Fig.14. Typical reverse diode current.
25
0.1
SDS
); conditions: V
50
0.2
0.3
75
Gate charge, QG (nC)
VDD = 11 V
V
0.4
100
GS
Tj/C =
= f(Q
0.5
VSDS/V
125
GS
0.6
G
150
= 0 V; parameter T
175
VDD = 44 V
)
0.7
175
0.8
200
0.9
25
225
1
1.1
250
j
transistor
6
avalanche current (I
100
10
1
0.001
Fig.15. Maximum permissible non-repetitive
Maximum Avalanche Current, I
PSMN005-55B, PSMN005-55P
unclamped inductive load
0.01
Tj prior to avalanche = 150 C
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
AV
(ms)
Product specification
1
25 C
Rev 1.200
10
AV
);