NTD20N03L27-1 ONSEMI [ON Semiconductor], NTD20N03L27-1 Datasheet

no-image

NTD20N03L27-1

Manufacturer Part Number
NTD20N03L27-1
Description
Power MOSFET
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD20N03L27-1G
Manufacturer:
ON
Quantity:
1 946
Part Number:
NTD20N03L27-1G
Manufacturer:
ON Semiconductor
Quantity:
10
NTD20N03L27
Power MOSFET
20 Amps, 30 Volts, N−Channel DPAK
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
Typical Applications
1. When surface mounted to an FR4 board using the minimum recommended
MAXIMUM RATINGS
August, 2004 − Rev. 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
This logic level vertical power MOSFET is a general purpose part
Pb−Free Packages are Available
Ultra−Low R
SPICE Parameters Available
Diode is Characterized for use in Bridge Circuits
I
High Avalanche Energy Specified
ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTD20N03L in many Applications
Semiconductor Components Industries, LLC, 2004
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
DSS
Derate above 25 C
Energy − Starting T
(V
I
Purposes, 1/8 from case for 10 seconds
L(pk)
DD
− Continuous
− Non−Repetitive (t
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
− Continuous @ T
− Continuous @ T
− Single Pulse (t
and V
= 30 Vdc, V
= 24 A, V
DS(on)
DS(on)
DS
Rating
GS
= 34 Vdc)
Specified at Elevated Temperatures
J
, Single Base, Advanced Technology
p
= 5 Vdc, L = 1.0 mH,
(T
= 25 C
v10 ms)
A
A
p
C
GS
v10 ms)
= 25_C
= 100_C
= 25 C unless otherwise noted)
A
C
= 1.0 MW)
= 25_C
= 25 C (Note 1)
Symbol
T
V
V
R
R
R
V
V
J
E
I
P
DGR
, T
DSS
DM
T
I
I
qJC
qJA
qJA
GS
GS
AS
D
D
D
L
stg
−55 to
Value
"20
"24
1.75
1.67
71.4
150
288
100
260
0.6
30
30
20
16
60
74
1
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
W
C
C
1 2
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
2
3
20 A, 30 V, R
3
20N3L
A
Y
WW
4
ORDERING INFORMATION
4
G
http://onsemi.com
CASE 369C
CASE 369D
STYLE 2
STYLE 2
= Device Code
= Assembly Location
= Year
= Work Week
DPAK−3
N−Channel
DPAK
D
DS(on)
Publication Order Number:
S
Gate
Gate
= 27 mW
DIAGRAMS
NTD20N03L27/D
MARKING
1
1
Drain
Drain
Drain
Drain
4
2
4
2
3
Source
3
Source

Related parts for NTD20N03L27-1

NTD20N03L27-1 Summary of contents

Page 1

... DS(on) N−Channel MARKING DIAGRAMS 4 Drain 4 DPAK CASE 369C STYLE Drain Gate Source 4 Drain 4 DPAK−3 CASE 369D STYLE Gate Drain Source 20N3L = Device Code A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Publication Order Number: NTD20N03L27/D ...

Page 2

... Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device NTD20N03L27 NTD20N03L27G NTD20N03L27−1 NTD20N03L27−1G NTD20N03L27T4 NTD20N03L27T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD20N03L27 ( unless otherwise noted Vdc ...

Page 3

... DRAIN CURRENT (AMPS) D Figure 3. On−Resistance vs. Drain Current and Temperature 1 1.4 1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature NTD20N03L27 40 V & ...

Page 4

... R , GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance 350 300 250 200 150 100 NTD20N03L27 iss oss Drain−to−Source Voltage vs. Total Charge ...

Page 5

... 0.13 (0.005 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD20N03L27 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 6

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD20N03L27/D ...

Related keywords