NTD3055L104T4 ONSEMI [ON Semiconductor], NTD3055L104T4 Datasheet - Page 6

no-image

NTD3055L104T4

Manufacturer Part Number
NTD3055L104T4
Description
Power MOSFET
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD3055L104T4
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Part Number:
NTD3055L104T4G
Manufacturer:
AD
Quantity:
3 341
Part Number:
NTD3055L104T4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD3055L104T4G
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Part Number:
NTD3055L104T4G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTD3055L104T4G
0
Company:
Part Number:
NTD3055L104T4G
Quantity:
2 500
Company:
Part Number:
NTD3055L104T4G
Quantity:
48
Company:
Part Number:
NTD3055L104T4G
Quantity:
40
100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
C
GS
Figure 11. Maximum Rated Forward Biased
0.00001
= 25 C
V
0.02
D = 0.5
0.2
0.1
0.05
= 15 V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
Safe Operating Area
1
R
THERMAL LIMIT
PACKAGE LIMIT
0.01
DS(on)
0.0001
LIMIT
100 ms
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
I
S
10 ms
0.001
Figure 13. Thermal Response
SAFE OPERATING AREA
t
p
10 ms
dc
http://onsemi.com
NTD3055L104
100
di/dt
t, TIME (ms)
t
a
6
t
0.01
rr
t
b
I
S
70
60
50
50
40
30
20
10
P
0.25 I
0
(pk)
25
DUTY CYCLE, D = t
Figure 12. Maximum Avalanche Energy versus
S
T
t
1
J
, STARTING JUNCTION TEMPERATURE ( C)
t
2
50
Starting Junction Temperature
0.1
TIME
1
75
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
100
(t) = r(t) R
− T
C
1
= P
125
qJC
(pk)
1
R
qJC
I
D
(t)
= 11 A
150
10
175

Related parts for NTD3055L104T4