NTVS3141P_09 ONSEMI [ON Semiconductor], NTVS3141P_09 Datasheet
NTVS3141P_09
Related parts for NTVS3141P_09
NTVS3141P_09 Summary of contents
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NTVS3141P Power MOSFET −20 V, −3 mW, Single P−Channel, CSP 1.0x1.5x0.65 mm Features • Low R at Low Gate Voltage DS(on) • Chip Scale Packaging • 2 High Power Density (A/mm ) • This is a Pb−Free Device ...
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MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance On to State Drain ...
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V = −4.5 V −2 −3 0.5 1.0 1.5 2.0 2.5 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.200 0.160 0.120 0.080 0.040 −V ...
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C iss 800 600 400 C oss 200 C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 V = − −1 −4 ...
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TYPICAL PERFORMANCE CURVES 1000 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) Figure 12. Thermal Response http://onsemi.com 100 1000 ...
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D PIN A1 REFERENCE È TOP VIEW 0. SIDE VIEW 0. 0.03 C BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components ...