N02L163WN1AB NANOAMP [NanoAmp Solutions, Inc.], N02L163WN1AB Datasheet - Page 6

• Manufacturer Part Number: N02L163WN1AB
• Description: 2Mb Ultra-Low Power Asynchronous CMOS SRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Timing Test Conditions
Timing
Byte Select Disable to High-Z Output
Output Hold from Address Change
Output Disable to High-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Enable to Valid Output
Address Valid to End of Write
Chip Enable to Low-Z output
Byte Select to Low-Z Output
Chip Enable to Valid Output
Chip Enable to End of Write
Data to Write Time Overlap
Byte Select to Valid Output
Byte Select to End of Write
Data Hold from Write Time
End Write to Low-Z Output
Write to High-Z Output
Address Access Time
Write Recovery Time
Address Setup Time
Write Pulse Width
Input and Output Timing Reference Levels
Read Cycle Time
Write Cycle Time
Item
Input Rise and Fall Time
Operating Temperature
Input Pulse Level
Output Load
Item
(DOC# 14-02-014 REV L ECN# 01-1000)
t
LBHZ
t
t
LBW
Symbol
LBZ
t
LB
t
t
t
t
t
t
t
WHZ
t
t
t
t
t
OHZ
t
t
t
t
OLZ
t
t
t
WC
CW
WP
WR
DW
OW
RC
CO
OE
OH
AW
DH
AA
HZ
AS
, t
LZ
, t
, t
, t
UBW
UB
UBZ
UBHZ
Min.
70
10
10
10
70
50
50
50
40
40
10
5
0
0
0
0
0
0
2.3 - 3.6 V
Max.
N02L163WN1A
70
70
35
35
20
20
20
20
0.1V
-40 to +85
Min.
55
10
10
10
55
40
40
40
40
35
10
CL = 30pF
5
0
0
0
0
0
0
CC
0.5 V
2.7 - 3.6 V
5ns
to 0.9 V
CC
o
Max.
C
55
55
30
30
20
20
20
20
CC
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6