N04L163WC1AB NANOAMP [NanoAmp Solutions, Inc.], N04L163WC1AB Datasheet

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N04L163WC1AB

Manufacturer Part Number
N04L163WC1AB
Description
4Mb Ultra-Low Power Asynchronous CMOS SRAM
Manufacturer
NANOAMP [NanoAmp Solutions, Inc.]
Datasheet
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
The N04L163WC1A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N04L163WC1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs.
Product Family
N04L163WC1AB
N04L163WC1AT
N04L163WC1AB1
N04L163WC1AT2
Part Number
44 - TSOP II Green
48 - BGA Pb-Free
Package Type
44 - TSOP II
48 - BGA
o
C to +85
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
o
C and is
(DOC# 14-02-018 REV I ECN# 01-1001)
-40
Temperature
Operating
o
C to +85
o
C 2.3V - 3.6V 70ns@ 2.7V
Features
• Single Wide Power Supply Range
• Very low standby current
• Very low operating current
• Very low Page Mode operating current
• Simple memory control
• Low voltage data retention
• Very fast output enable access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
Supply
Power
(Vcc)
2.3 to 3.6 Volts
4.0µA at 3.0V (Typical)
2.0mA at 3.0V and 1µs (Typical)
0.8mA at 3.0V and 1µs (Typical)
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Vcc = 1.8V
25ns OE access time
able
Options
Speed
N04L163WC1A
Current (I
Standby
Typical
4 µA
SB
),
2 mA @ 1MHz
Current (Icc),
Operating
Typical
1

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N04L163WC1AB Summary of contents

Page 1

... SRAMs. Product Family Part Number Package Type N04L163WC1AB 48 - BGA N04L163WC1AT 44 - TSOP II N04L163WC1AB1 48 - BGA Pb-Free N04L163WC1AT2 44 - TSOP II Green The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. Features • Single Wide Power Supply Range 2.3 to 3.6 Volts • ...

Page 2

NanoAmp Solutions, Inc. Pin Configurations I/O 0 I/O 1 I/O 2 I/O 3 VCC VSS I/O 4 I/O 5 I ...

Page 3

NanoAmp Solutions, Inc. Functional Block Diagram Word Address Address Inputs Decode Logic Page Address Address Inputs Decode A4 - A17 Logic CE WE Control OE Logic UB LB Functional Description ...

Page 4

NanoAmp Solutions, Inc. Absolute Maximum Ratings Item Voltage on any pin relative to V Voltage on V Supply Relative Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time 1. Stresses greater than those listed above may ...

Page 5

NanoAmp Solutions, Inc. Power Savings with Page Mode Operation ( Page Address (A4 - A17 ) Word Address ( LB, UB Note: Page mode operation is a method of addressing the SRAM to save ...

Page 6

NanoAmp Solutions, Inc. Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature Timing Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable ...

Page 7

NanoAmp Solutions, Inc. Timing of Read Cycle ( Address Previous Data Valid Data Out Timing Waveform of Read Cycle (WE= V Address CE OE LB, UB High-Z Data Out The specifications of this device are subject ...

Page 8

NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control) Address CE LB High-Z Data In Data Out Timing Waveform of Write Cycle (CE Control) Address CE LB Data In Data Out The specifications of ...

Page 9

NanoAmp Solutions, Inc. 44-Lead TSOP II Package (T44) 10.16±0.13 0.80mm REF DETAIL B 0.20 0.00 Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash The specifications of this device are subject to change without notice. For ...

Page 10

NanoAmp Solutions, Inc. Ball Grid Array Package D A1 BALL PAD CORNER (3) TOP VIEW K TYP J TYP BOTTOM VIEW Dimensions (mm 6±0.10 8±0.10 0.375 The specifications of this device are subject to change without notice. ...

Page 11

NanoAmp Solutions, Inc. Ordering Information N04L163WC1AX-XX I Package Type Revision History Revision # Date A Jan. 2001 B Mar. 2001 C May. 2001 D June. 2001 E Dec. 2001 F Nov. 2002 G February 2003 H August 2004 I Oct ...

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