N04L163WC1AB NANOAMP [NanoAmp Solutions, Inc.], N04L163WC1AB Datasheet - Page 5

• Manufacturer Part Number: N04L163WC1AB
• Description: 4Mb Ultra-Low Power Asynchronous CMOS SRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Power Savings with Page Mode Operation (WE = V
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
CE
OE
Page Address (A4 - A17 )
Word Address (A0 - A3)
LB, UB
(DOC# 14-02-018 REV I ECN# 01-1001)
Word 1
Word 2
Open page
IH
)
...
N04L163WC1A
Word 16
5