S29GL-A SPANSION [SPANSION], S29GL-A Datasheet - Page 83

• Manufacturer Part Number: S29GL-A
• Description: S29GL-A MirrorBit Flash Family
• Manufacturer: SPANSION [SPANSION]

Erase And Programming Performance
Notes:
1.
2.
3.
4.
5.
6.
7.
Notes:
1.
2.
April 22, 2005 S29GL-A_00_A3
Sector Erase Time
Chip Erase Time
Total Write Buffer Program Time
Total Accelerated Effective Write Buffer Program Time
(Notes
Chip Program Time
Parameter Symbol
Typical program and erase times assume the following conditions: 25°C, V
Under worst case conditions of 90
Effective programming time (typ) is 15 µs (per word), 7.5 µs (per byte).
Effective accelerated programming time (typ) is 12.5 µs (per word), 6.3 µs (per byte).
Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
System-level overhead is the time required to execute the command sequence(s) for the program command. See
Table 31 on page 55
Sampled, not 100% tested.
Test conditions T
4, 5)
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
for further information on command definitions.
Parameter
A d v a n c e
Parameter Description
Control Pin Capacitance
Table 45. TSOP Pin and BGA Package Capacitance
Output Capacitance
°
Input Capacitance
(Notes
C; Worst case V
3, 5)
S29GL-A MirrorBit™ Flash Family
S29GL016A
S29GL032A
S29GL064A
S29GL016A
S29GL032A
S29GL064A
CC
I n f o r m a t i o n
, 100,000 cycles.
Typ
V
V
V
OUT
IN
IN
17.5
31.5
(Note
240
200
0.5
32
64
16
63
CC
= 0
= 0
= 0
= 3.0V, 10,000 cycles; checkerboard data pattern.
Test Setup
1)
(Note
Max
128
TSOP
TSOP
TSOP
3.5
BGA
BGA
BGA
35
64
2)
Unit
sec
sec
µs
Typ
4.2
8.5
5.4
7.5
3.9
6
Table 30 on page 54
Excludes system
prior to erasure
level overhead
programming
Excludes 00h
Comments
Max
7.5
5.0
6.5
4.7
(Note
(Note
12
9
6)
7)
Unit
pF
pF
pF
pF
pF
pF
and
81