IS62C256 ETC, IS62C256 Datasheet - Page 3
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IS62C256
Manufacturer Part Number
IS62C256
Description
32K x 8 LOW POWER CMOS STATIC RAM
Manufacturer
ETC
Datasheet
1.IS62C256.pdf
(8 pages)
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IS62C256
DC ELECTRICAL CHARACTERISTICS
Note:
1. V
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
OPERATING RANGE
POWER SUPPLY CHARACTERISTICS
Note:
1. At f = f
Symbol
Symbol
I
I
I
I
CC
CC
SB
SB
Symbol
C
C
V
Range
Commercial
Industrial
V
V
V
I
I
1
2
1
2
LO
IL
OH
LI
IN
OUT
OL
IH
IL
= –3.0V for pulse width less than 10 ns.
MAX
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Parameter
Vcc Operating
Supply Current
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Parameter
Input Capacitance
Output Capacitance
A
(1,2)
= 25 C, f = 1 MHz, Vcc = 5.0V.
Ambient Temperature
–40 C to +85 C
0 C to +70 C
(1)
Test Conditions
V
V
GND
GND
Outputs Disabled
Test Conditions
V
I
V
I
V
V
CS
V
CS
V
V
OUT
OUT
CC
CC
CC
IN
CC
IN
IN
CC
CC
= V
= Max.,
= Max.,
= Max.,
= Max.,
= 0 mA, f = 0
= 0 mA, f = f
= Min., I
= Min., I
V
V
V
0.2V, f = 0
IH
CC
CC
IH
, f = 0
V
V
or V
(1)
– 0.2V,
– 0.2V, or
IN
OUT
Conditions
V
CS
CS
(Over Operating Range)
V
IL
OUT
5V
5V
IN
OH
OL
V
= V
= V
MAX
= 0V
V
CC
V
= 2.1 mA
= 0V
= –1.0 mA
IL
IL
CC
CC
10%
10%
,
Com.
Com.
Com.
Com.
Ind.
Ind.
Ind.
Ind.
Min. Max.
Max.
—
—
—
—
—
—
—
—
10
-45 ns
8
Com.
Com.
Ind.
Ind.
0.5
1.0
60
70
70
80
10
5
Min.
–0.3
Unit
–10
–10
2.4
2.2
Min. Max.
–2
–2
pF
pF
—
—
—
—
—
—
—
—
—
-70 ns
0.5
1.0
60
70
65
75
10
5
V
CC
Max.
0.4
0.8
10
10
—
2
2
+ 0.5
Unit
mA
mA
mA
mA
ISSI
Unit
V
V
V
V
A
A
®
3