IS62C256 ETC, IS62C256 Datasheet - Page 4
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IS62C256
Manufacturer Part Number
IS62C256
Description
32K x 8 LOW POWER CMOS STATIC RAM
Manufacturer
ETC
Datasheet
1.IS62C256.pdf
(8 pages)
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IS62C256
DATA RETENTION CHARACTERISTICS
AC TEST CONDITIONS
4
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST LOADS
Symbol Parameter
Symbol
V
I
I
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
t
t
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1.
DR
DR
RC
AA
OHA
ACS
DOE
LZOE
HZOE
LZCS
HZCS
PU
PD
DR
1
2
(3)
(3)
(2)
(2)
(2)
(2)
Read Cycle Time
Address Access Time
Output Hold Time
CS
OE
OE
OE
CS
CS
CS
CS
Access Time
to Low-Z Output
to High-Z Output
to Power-Up
to Power-Down
Access Time
to Low-Z Output
to High-Z Output
Parameter
V
Data retention current
Data retention current
CC
for retention of data
OUTPUT
5V
Including
100 pF
jig and
scope
Figure 1.
480
See Figures 1 and 2
255
Test Conditions
V
V
DR
DR
0V to 3.0V
Min.
45
—
—
—
—
2
0
0
3
0
0
= 3.0V, T
= 3.0V, T
1.5V
Unit
3 ns
-45 ns
OUTPUT
Max.
45
45
25
20
20
30
—
—
—
—
—
5V
A
A
Including
= 0 C to +25 C
= 0 C to +70 C
(1)
jig and
scope
Figure 2.
5 pF
(Over Operating Range)
Integrated Silicon Solution, Inc. — 1-800-379-4774
480
Min.
70
—
—
—
—
2
0
0
3
0
0
-70 ns
255
Max.
70
70
35
25
25
50
—
—
—
—
—
Min.
2.0
—
—
Unit
Max.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
200
200
—
ISSI
Units
V
A
A
SR072-1E
05/12/99
®