VSC8113QB1 VITESSE [Vitesse Semiconductor Corporation], VSC8113QB1 Datasheet - Page 16

• Manufacturer Part Number: VSC8113QB1
• Description: ATM/SONET/SDH 622 Mb/s Transceiver Mux/Demux with Integrated Clock Generation and Clock Recovery
• Manufacturer: VITESSE [Vitesse Semiconductor Corporation]

ATM/SONET/SDH 622 Mb/s Transceiver Mux/Demux
with Integrated Clock Generation and Clock Recovery
Page 16
Power Dissipation
Table 16: Power Supply Currents
Absolute Maximum Ratings
Power Supply Voltage (V
PECL I/O Supply Voltage (V
DC Input Voltage (PECL inputs).......................................................................................... -0.5V to V
DC Input Voltage (TTL inputs) ......................................................................................................... -0.5V to 5.5V
DC Output Voltage (TTL Outputs)........................................................................................ -0.5V to V
Output Current (TTL Outputs) ................................................................................................................. +/-50mA
Output Current (PECL Outputs)................................................................................................................+/-50mA
Case Temperature Under Bias .........................................................................................................-55
Storage Temperature..................................................................................................................... -65
Maximum Input ESD (Human Body Model).............................................................................................. 1500 V
Note: Caution: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing
Recommended Operating Conditions
Power Supply Voltage (V
PECL I/O Supply Voltage (V
Commercial Operating Temperature Range ..................................................................... 0
Extended Operating Temperature Range................... 0
Industrial Operating Temperature Range ...................................................................... -40
Parameter
permanent damage. Functionality at or exceeding the values listed is not implied. Exposure to these values for extended
periods may affect device reliability.
I
P
DD
D
Power supply current from V
Power dissipation (worst case)
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: [phone]
DD
DD
) Potential to GND .................................................................................-0.5V to +4V
) ................................................................................................................. +3.3V
DDP
DDP
) Potential to GND..........................................................................-0.5V to +6V
).......................................................................................... +3.3V or +5.0V
VITESSE
VITESSE SEMICONDUCTOR CORPORATION
SEMICONDUCTOR CORPORATION
DD
(1)
Description
o
to 85
o
C ambient equivalent to 0
o
o
o
ambient to 115
ambient to 70
ambient to 85
(Max)
480
1.6
VSC8113
Data Sheet
o
C to +150
o
G52154-0, Rev 4.2
DDP
DD
to +125
Units
o
o
o
+ 0.5V
mA
C case
C case
C case
+0.5V
W
5
5
3/19/99
o
o
%
%
C
C