TEA1520T NXP [NXP Semiconductors], TEA1520T Datasheet - Page 11

• Manufacturer Part Number: TEA1520T
• Description: SMPS ICs for low-power systems
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
TEA152X_3
Product data sheet
Table 6.
T
positive when flowing into the IC; unless otherwise specified.
Symbol
Valley switching
( V/ t)
f
t
Current and short-circuit winding protection
V
t
V
t
FET output stage
I
V
R
t
Temperature protection
T
T
valley
d(vrec-swon)
d(prop)
leb
L(drain)
f(DRAIN)
amb
prot(max)
prot(hys)
source(max)
swp
BR(DRAIN)
DSon
= 25 C; no over temperature; all voltages are measured with respect to ground; currents are
vrec
Characteristics
Parameter
valley recognition voltage
change with time
ringing frequency for valley
switching
valley recognition to
switch-on delay time
maximum source voltage
delay from detecting
V
short circuit winding
protection voltage
leading edge blanking time
drain leakage current
breakdown voltage on pin
DRAIN
drain-source on-state
resistance
fall time on pin DRAIN
maximum threshold
temperature
hysteresis of protection
temperature
source(max)
TEA1520x
TEA1521x
TEA1522x
TEA1523P
Rev. 03 — 23 March 2009
to switch-off
…continued
Conditions
N
V
T
I
I
I
I
V
no external capacitor
at drain
source
source
source
source
V/ t = 0.1 V/ s
V/ t = 0.5 V/ s
V/ t = 0.5 V/ s
j
drain
i
T
T
T
T
T
T
T
T
> 0 C
= 300 V;
j
j
j
j
j
j
j
j
V
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
o
= 650 V
= 0.06 A
= 0.125 A
= 0.25 A
= 0.50 A
= 100 V
SMPS ICs for low-power systems
Min
200
-
0.47
-
0.7
250
-
650
-
-
-
-
-
-
-
-
-
150
-
102 -
TEA152x
© NXP B.V. 2009. All rights reserved.
Typ
550
150
0.50
160
0.75
350
-
-
48
68
24
34
12
17
6.5
9.0
75
160
2
Max
+102 V/ s
800
-
0.53
185
0.8
450
125
-
55.2
78.2
27.6
39.1
13.8
19.6
7.5
10.0
-
170
-
11 of 17
Unit
kHz
ns
V
ns
V
ns
V
ns
C
C
A