BGD885_01 NXP [NXP Semiconductors], BGD885_01 Datasheet - Page 3

• Manufacturer Part Number: BGD885_01
• Description: 860 MHz, 17 dB gain power doubler amplifier
• Manufacturer: NXP [NXP Semiconductors]

Philips Semiconductors
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; V
Notes
1. Decrease per octave of 1.5 dB.
2. V
3. Measured according to DIN45004B:
4. Measured according to DIN45004B:
5. The module normally operates at V
2001 Nov 02
G
SL
FL
S
S
d
V
F
I
tot
2
11
22
o
860 MHz, 17 dB gain power doubler amplifier
p
SYMBOL
V
measured at f
f
f
f
measured at f
f
f
f
measured at f
p
q
r
p
q
r
p
q
= 350.25 MHz; V
= 860.25 MHz; V
= 341.25 MHz; V
= 348.25 MHz; V
= 851.25 MHz; V
= 858.25 MHz; V
= 59 dBmV at f
= 59 dBmV at f
p
p
p
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
second order distortion
output voltage
noise figure
total current consumption (DC)
+ f
+ f
+ f
q
q
q
p
q
r
r
p
q
p
q
= 752.5 MHz.
= 349.25 MHz;
= 403.25 MHz;
= V
= V
= V
= V
= V
= V
f
f
r
r
= 339.25 MHz.
= 849.25 MHz.
o
o
o
o
o
o
;
;
PARAMETER
6 dB;
6 dB;
6 dB;
6 dB;
B
B
= 24 V; T
= 24 V, but is able to withstand supply transients up to 30 V.
mb
= 35 C; Z
f = 50 MHz
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 MHz; note 1
f = 800 to 860 MHz
f = 40 MHz; note 1
f = 800 to 860 MHz
note 2
d
d
f = 50 MHz
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
note 5
im
im
3
= 60 dB; note 3
= 60 dB; note 4
S
= Z
CONDITIONS
L
= 75
16.5
0.2
20
10
20
10
64
63
MIN.
Product specification
17.5
1.6
8
8
8
8
8
450
MAX.
0.5
53
BGD885
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dB
dB
dB
dB
dB
mA
UNIT