NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 14

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

Memory array organization
2
14/69
Memory array organization
The memory array of the devices is made up of NAND structures where 32 cells are
connected in series. It is organized into blocks where each block contains 64 pages. The
array is split into two areas, the main area, and the spare area. The main area of the array is
used to store data, and the spare area typically stores error correction codes, software flags,
or bad block identification.
In x8 devices, the pages are split into a 2048-byte main area and a spare area of 64 bytes.
In x16 devices, the pages are split into a 1024-word main area and a spare area of 32
words. Refer to
Bad blocks
In the x8 devices, the NAND Flash 2112 byte/1056 word page devices may contain bad
blocks, which are blocks that contain one or more invalid bits whose reliability is not
guaranteed. Additional bad blocks may develop during the lifetime of the device.
The bad block information is written prior to shipping (refer to
management
Table 4
blocks that are present when the device is shipped and the bad blocks that could develop
later on. Block 0 is guaranteed to be valid up to 1000 write/erase cycles with 1 bit ECC.
These blocks need to be managed using bad blocks management, block replacement, or
error correction codes (refer to
Table 4.
1. The NAND08G-BxC devices are composed of two 4-Gbit dice. The minimum number of valid blocks is
4016 for each die.
shows the minimum number of valid blocks. The values shown include both the bad
Density of Device
Valid Blocks
8 Gbits
for more details).
4 Gbits
Figure 6: Memory array
(1)
Section 9: Software
organization.
4016
8032
Min
algorithms).
NAND04G-B2D, NAND08G-BxC
Section 9.1: Bad block
4096
8192
Max