NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 30

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

Device operations
Figure 15. Copy back program (with readout of data)
Figure 16. Page copy back program with random data input
6.6
30/69
RB
I/O
RB
I/O
Read
Code
00h
Read
Code
00h
Multiplane copy back program
In addition to multiplane page program, the NAND04G-B2D and NAND08G-BxC devices
support multiplane copy back program.
A Multiplane Copy Back Program command requires exactly the same steps as a Multiplane
Page Program command, and must satisfy the same time constraints (see
Multiplane page
Prior to executing the multiplane copy back program operation, two single-page read
operations must be executed to copy back the first page from the first plane and the second
page from the second plane.
The EDC check is also performed during the multiplane copy back program. Errors during
multiplane copy back operations can be detected by performing a Read EDC Status
Register operation (see
If the multiplane copy back program fails, an error is signaled on bit SR0 of the Status
Register. To know which page of the two planes failed, the Read Status Enhanced
command must be executed twice, once for each plane (see
Add Inputs
Source
Add Inputs
(Read Busy time)
Source
tBLBH1
(Read Busy time)
35h
tBLBH1
program).
Busy
35h
Copy Back
85h
Code
Busy
Section 6.13: Read EDC Status
Data Outputs
Add Inputs
Target
Copy Back
Data
Code
85h
Unlimited number of repetitions
85h
Add Inputs
Target
Add Inputs
2 Cycle
Register).
NAND04G-B2D, NAND08G-BxC
Section
(Program Busy time)
(Program Busy time)
Data
tBLBH2
tBLBH2
10h
6.12).
10h
Busy
Busy
Section 6.4:
70h
70h
Read Status
Register
ai09858c
SR0
ai11001
SR0