NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 67

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

NAND04G-B2D, NAND08G-BxC
14
Part numbering
Table 34.
1. x16 organization only available for MCP products
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to
’1’. For further information on any aspect of this device, please contact your nearest
Numonyx Sales Office.
Example:
Device type
NAND Flash memory
Density
04 G = 4 Gb
08 G = 8 Gb
Operating voltage
W = V
R = V
Bus width
3 = x8
4 = x16
Family identifier
B = 2112 byte page
Device options
2 = Chip Enable ‘don't care’ enabled
4 = Chip Enable ‘don’t care’ enabled with dual interface
Product version
C= Third version (NAND08G-BxC)
D = Fourth version (NAND04G-B2D)
Package
N = TSOP48 12 x 20 mm
ZL = LGA52 12 x 17 mm
Temperature range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
E = ECOPACK package, standard packing
F = ECOPACK package, tape and reel packing
DD
DD
(1)
= 1.7 to 1.95 V
= 2.7 to 3.6 V
Ordering information scheme
NAND04GW3B2D N
6
Part numbering
E
67/69