NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 50

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
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DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the devices. The parameters in the following DC and AC characteristics
tables are derived from tests performed under the measurement conditions summarized in
Table
measurement conditions when relying on the quoted parameters.
Table 26.
Table 27.
1. T
2. Input/output capacitances double in stacked devices.
Supply voltage (V
Ambient temperature (T
Load capacitance (C
and C
Input pulses voltages
Input and output timing ref. voltages
Output circuit resistor R
Input rise and fall times
Symbol
C
C
A
I/O
IN
= 25°C, f = 1MHz. C
26. Designers should check that the operating conditions in their circuit match the
L
)
Input capacitance
Input/output
capacitance
Operating and AC measurement conditions
Capacitance
DD
Parameter
)
L
) (1 TTL GATE
A
ref
IN
)
(2)
and C
Parameter
(1)
I/O
are not 100% tested.
Test condition
V
V
1.8 V device
3.0 V device
IN
IL
Grade 1
Grade 6
= 0V
= 0V
NAND04G-B2D, NAND08G-BxC
Typ
Min
–40
2.7
30
50
0
0
NAND Flash
V
8.35
DD
5
/2
Max
Max
10
10
V
3.6
70
85
DD
Units
Unit
pF
pF
°C
°C
pF
pF
k
ns
V
V
V