M58BW16FB4T3 STMICROELECTRONICS [STMicroelectronics], M58BW16FB4T3 Datasheet - Page 46

• Manufacturer Part Number: M58BW16FB4T3
• Description: 16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

DC and AC parameters
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Table 16.
1. T
2. Sampled only, not 100% tested.
Table 17.
1. The Standby mode can be disabled by setting the Standby Disable bit (M14) of the Burst Configuration
2. I
I
DDP-UP
Symbol
I
I
I
I
I
I
DDB
DD1
DD2
DD3
DD4
Symbol
V
Register to ‘1’.
moment when the supply voltage has become stable and RP is brought to High.
DD
V
V
V
V
DDP-UP
I
V
C
A
I
LKO
LO
OH
OL
LI
C
IH
IH
IL
OUT
(1)
= 25°C, f = 1 MHz
(1)
(1)
(1)
(1)
(1)
IN
(2)
is defined only during the power-up phase, from the moment current is applied with RP Low to the
Input Leakage Current
Output Leakage Current
Supply Current (Random
Read)
Supply Current (Power-up)
Supply Current (Burst
Read)
Supply Current (Standby)
Supply Current (Program
or Erase)
Supply Current
(Erase/Program Suspend)
Supply Current (Standby
Disable)
Input Low Voltage
Input High Voltage (for DQ
lines)
Input High Voltage (for
Input only lines)
Output Low Voltage
Output High Voltage
CMOS
V
and Program lockout)
DD
Device capacitance
DC characteristics
Input Capacitance
Output Capacitance
Supply Voltage (Erase
Parameter
Parameter
(1)(2)
Program, Erase in
E = V
E = V
E = RP = V
Test Condition
0V V
f
0V V
I
clock
OH
f
I
add
OL
progress
E = V
Test Condition
= –100µA
IL
IL
OUT
0.2V
= 100µA
IN
= 6MHz
= 75MHz
, G = V
, G = V
V
V
OUT
IN
V
IH
V
DDQ
DD
DDQ
= 0V
= 0V
IH
IH
±
,
,
0.8V
0.8V
V
DDQ
–0.5
Min
DDQIN
DDQIN
–0.1
Typ
6
8
M58BW16F, M58BW32F
Typ
5
Max
12
8
0.2V
V
DDQ
Max
150
150
3.6
2.2
0.1
±1
±5
25
20
50
30
10
DDQIN
+0.3
Unit
pF
pF
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V