NTGD4161P_06 ONSEMI [ON Semiconductor], NTGD4161P_06 Datasheet
NTGD4161P_06
Manufacturer Part Number
NTGD4161P_06
Description
Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.NTGD4161P_06.pdf
(5 pages)
NTGD4161P
Power MOSFET
−30 V, −2.3 A, Dual P−Channel, TSOP−6
Features
•
•
•
•
•
Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size
2. When surface mounted to an FR4 board using minimum recommended
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 1
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Ambient − t ≤ 5 s (Note 1)
Junction−to−Case − Steady State (Note 1)
Fast Switching Speed
Low Gate Charge
Low R
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
Load Switch
Battery Protection
Portable Devices Like PDAs, Cellular Phones and Hard Drives
(Cu. area = 1.2 in
pad size (Cu. area = 0.047 in
DS(on)
Parameter
Parameter
2
[1 oz] including traces)
(T
J
= 25°C unless otherwise noted)
Steady
State
t ≤ 5 s
Steady
State
t ≤ 5 s
Steady
State
2
)
t
p
= 10 ms
T
T
T
T
T
T
T
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
Symbol
R
R
V
T
V
I
T
P
P
DSS
STG
T
qJA
qJC
I
I
DM
I
GS
D
D
S
J
D
D
L
,
−55 to
Value
Max
225
−2.1
−1.5
−2.3
−1.5
−1.1
−0.8
115
−30
±20
−10
150
260
95
40
1.1
1.3
0.6
1
°C/W
Unit
Unit
°C
°C
W
W
V
V
A
A
A
A
*Date Code orientation may vary depending upon
†For information on tape and reel specifications,
NTGD4161PT1G
manufacturing location.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
G1
V
(BR)DSS
−30 V
CASE 318G
STYLE 13
Device
(Note: Microdot may be in either location)
TSOP−6
(MOSFET1)
ORDERING INFORMATION
P−Channel
S8
M
G
1
http://onsemi.com
D1
S1
(Pb−Free)
= Specific Device Code
= Date Code*
= Pb−Free Package
Package
TSOP−6
280 mW @ −4.5 V
160 mW @ −10 V
Publication Order Number:
MARKING DIAGRAM
R
G2
DS(on)
D1
G1
3000 / Tape & Reel
S8 MG
(MOSFET2)
P−Channel
Max
S1
S2
Shipping
NTGD4161P/D
G
D2
G2
D2
S2
†
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NTGD4161P_06 Summary of contents
Page 1
NTGD4161P Power MOSFET −30 V, −2.3 A, Dual P−Channel, TSOP−6 Features • Fast Switching Speed • Low Gate Charge • Low R DS(on) • Independently Connected Devices to Provide Design Flexibility • This is a Pb−Free Device Applications • Load ...
Page 2
ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
Page 3
TYPICAL PERFORMANCE CURVES 5 −10 V −4 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.5 0.4 0 125° 25°C J 0.1 ...
Page 4
C RSS DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0 0.7 0.6 0 150°C J 0.4 0 125°C J ...
Page 5
0.05 (0.002) A1 1.9 0.075 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and ...