AT90PWM2B-16SE ATMEL [ATMEL Corporation], AT90PWM2B-16SE Datasheet - Page 295
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AT90PWM2B-16SE
Manufacturer Part Number
AT90PWM2B-16SE
Description
8-bit Microcontroller with 8K Bytes In-System Programmable Flash
Manufacturer
ATMEL [ATMEL Corporation]
Datasheet
1.AT90PWM2B-16SE.pdf
(361 pages)
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25.9.2
25.9.3
4317J–AVR–08/10
Data Polling Flash
Data Polling EEPROM
5. The EEPROM array is programmed one byte at a time by supplying the address and data
6. Any memory location can be verified by using the Read instruction which returns the con-
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
When a page is being programmed into the Flash, reading an address location within the page
being programmed will give the value 0xFF. At the time the device is ready for a new page, the
programmed value will read correctly. This is used to determine when the next page can be writ-
ten. Note that the entire page is written simultaneously and any address within the page can be
used for polling. Data polling of the Flash will not work for the value 0xFF, so when programming
this value, the user will have to wait for at least t
a chip-erased device contains 0xFF in all locations, programming of addresses that are meant to
contain 0xFF, can be skipped. See
When a new byte has been written and is being programmed into EEPROM, reading the
address location being programmed will give the value 0xFF. At the time the device is ready for
a new byte, the programmed value will read correctly. This is used to determine when the next
byte can be written. This will not work for the value 0xFF, but the user should have the following
in mind: As a chip-erased device contains 0xFF in all locations, programming of addresses that
are meant to contain 0xFF, can be skipped. This does not apply if the EEPROM is re-pro-
grammed without chip erasing the device. In this case, data polling cannot be used for the value
0xFF, and the user will have to wait at least t
Table 25-15
Table 25-15. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol
t
t
t
WD_FLASH
WD_EEPROM
WD_ERASE
Memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the 8 MSB of
the address. If polling is not used, the user must wait at least t
next page. (See
Flash write operation completes can result in incorrect programming.
together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling is not used, the user must wait
at least t
device, no 0xFFs in the data file(s) need to be programmed.
tent at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
CC
for t
WD_EEPROM
power off.
WD_EEPROM
Table
before issuing the next byte. (See
value.
25-15.) Accessing the serial programming interface before the
Table 25-15
WD_EEPROM
WD_FLASH
for t
WD_FLASH
Minimum Wait Delay
before programming the next byte. See
before programming the next page. As
AT90PWM2/3/2B/3B
Table
value.
4.5 ms
3.6 ms
9.0 ms
WD_FLASH
25-15.) In a chip erased
before issuing the
295
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