2SK3497_06 TOSHIBA [Toshiba Semiconductor], 2SK3497_06 Datasheet - Page 2

• Manufacturer Part Number: 2SK3497_06
• Description: Silicon N Channel MOS Type High Power Amplifier Application
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source saturation voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
This transistor is an electrostatic-sensitive device. Please handle with caution.
Characteristics
TOSHIBA
K3497
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
(Ta = 25°C)
V
Symbol
(BR) DSS
DS (ON)
I
I
C
|Y
C
C
GSS
DSS
V
oss
rss
iss
th
fs
|
V
V
I
V
V
V
V
D
GS
DS
DS
GS
DS
DS
= 10 mA, V
= 180V, V
= 10 V, I
= 10 V, I
= 30 V, V
= ±12 V, V
= 7 V, I
D
2
D
D
GS
= 5 A
GS
Test Condition
GS
= 1 mA
= 5 A
DS
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
180
Min
1.1
6.0
—
—
—
—
—
—
2400
Typ.
12.0
220
—
—
—
—
—
30
2006-11-20
2SK3497
0.75
Max
100
2.1
10
—
—
—
—
—
Unit
μA
μA
pF
V
V
V
S