2SK3497(F) Toshiba, 2SK3497(F) Datasheet

2SK3497(F)

Manufacturer Part Number

2SK3497(F)

Description

MOSFET N-CH 180V 10A SC-67

Manufacturer

Toshiba

Datasheet

1.2SK3497F.pdf (5 pages)

Specifications of 2SK3497(F)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Drain To Source Voltage (vdss)

180V

Current - Continuous Drain (id) @ 25° C

10A

Vgs(th) (max) @ Id

2.1V @ 1mA

Input Capacitance (ciss) @ Vds

2400pF @ 30V

Power - Max

130W

Mounting Type

Through Hole

Package / Case

2-16C1B (TO-247 N)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Rds On (max) @ Id, Vgs

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SK3497(F)

Manufacturer:

AVAGO

Quantity:

36 700

Current page: 1 of 5
Download datasheet (151Kb)

High Power Amplifier Application

Maximum Ratings

Thermal Characteristics

High breakdown voltage: V

Complementary to 2SJ618

Drain−source voltage

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Pulse (Note 1)

DC (Note 1)

(Ta = 25°C)

DSS

= 180 V

Symbol

th (ch−c)

th (ch−a)

GSS

DSS

stg

2SK3497

−55 to 150

Rating

Max

0.96

180

±12

130

150

°C / W

Unit

°C

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

1.0

5.45 ± 0.2

2.0 ± 0.3

＋0.3

－0.25

15.9 MAX.

5.45 ± 0.2

2-16C1B

SC-65

Ф3.2 ± 0.2

2009-01-27

⎯

2SK3497

Unit: mm

Related parts for 2SK3497(F)

2SK3497(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. ...

Page 2

... Drain−source saturation voltage Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance This transistor is an electrostatic-sensitive device. Please handle with caution. Marking TOSHIBA K3497 Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb)-Free (Ta = 25°C) Symbol ...

Page 3

I – 3 2 Common source Tc = 25°C Pulse test Drain-source voltage V DS ⎪Y ⎪ – 100 ...

Page 4

Safe operating area 100 I D MAX. (pulsed MAX. (continuous ms OPERATION Tc=25℃ Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

Related keywords

2sk34
2sk3497
2sk349
2SK3497(F) datasheet
2SK3497(F) data sheet
2SK3497(F) pdf datasheet
2SK3497(F) component
2SK3497(F) part
2SK3497(F) distributor
2SK3497(F) RoHS
2SK3497(F) datasheet download