2SK3499_06 TOSHIBA [Toshiba Semiconductor], 2SK3499_06 Datasheet
2SK3499_06
Related parts for 2SK3499_06
2SK3499_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) ...
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Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time ...
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I – Common source 15 5 25°C 6.0 pulse test Drain-source voltage V ( – ...
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(ON) 2.5 Common source pulse test 2.0 1 1 −80 −80 −40 − Case temperature Tc ...
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Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 0.003 10 μ 100 μ Safe operating area 100 I D max (pulsed 100 μ max (continuous ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...