2SK3499_06 TOSHIBA [Toshiba Semiconductor], 2SK3499_06 Datasheet - Page 2

• Manufacturer Part Number: 2SK3499_06
• Description: Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics (Ta = 25°C)
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
K3499
Rise time
Turn-ON time
Fall time
Turn-OFF time
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
t
on
off
rss
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
Duty < = 1%, t
V
I
V
I
V
V
V
V
V
V
G
D
GS
DS
DS
GS
DS
DS
DD
GS
= 10 mA, V
= ±10 μA, V
10 V
I
I
dI
0 V
DR
DR
= 400 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±25 V, V
= 10 V, I
∼ − 320 V, V
DR
2
= 10 A, V
= 10 A, V
(Ta = 25°C)
/dt = 100 A/μs
w
Test Condition
D
D
D
GS
GS
= 10 μs
DS
Test Condition
GS
= 1 mA
= 5.0 A
DS
= 5.0 A
GS
= 0 V
GS
GS
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
I
⎯
⎯
= 0 V
= 0 V,
D
= 5 A
V
DD
D
R
∼ − 200 V
L
= 10 A
= 40 Ω
V
OUT
±30
400
Min
Min
2.0
4.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1340
Typ.
Typ.
160
490
140
350
4.0
0.8
3.6
⎯
⎯
⎯
⎯
⎯
22
60
32
34
18
16
⎯
⎯
⎯
2006-11-06
2SK3499
Max
0.55
−1.7
Max
±10
100
4.0
10
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
μA
μA
nC
μC
pF
ns
μs
V
V
V
Ω
S
A
A
V