2SK3506_06 TOSHIBA [Toshiba Semiconductor], 2SK3506_06 Datasheet - Page 2

• Manufacturer Part Number: 2SK3506_06
• Description: Silicon N Channel MOS Type Relay Drive and DC-DC Converter Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics (Ta = 25°C)
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
TOSHIBA
K3506
Rise time
Turn-ON time
Fall time
Turn-OFF time
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
t
on
off
rss
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
Duty < = 1%, t
V
V
I
V
V
V
V
V
V
D
GS
DS
DS
GS
DS
DS
DD
GS
= 10 mA, V
10 V
I
I
dI
0 V
DR
DR
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 10 V, I
∼ − 24 V, V
DR
2
= 45 A, V
= 45 A, V
(Ta = 25°C)
/dt = 50 A/μs
w
Test Condition
D
D
D
GS
GS
GS
= 10 μs
GS
Test Condition
= 1 mA
= 25 A
DS
= 25 A
= 0 V
GS
GS
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
I
⎯
⎯
= 0 V
= 0 V,
D
= 25 A
V
DD
D
R
= 45 A
∼ − 30 V
L
= 1.2 Ω
V
OUT
Min
Min
1.5
30
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1500
Typ.
Typ.
480
680
130
100
200
⎯
⎯
⎯
⎯
16
26
11
18
60
39
25
14
⎯
⎯
⎯
2006-11-16
2SK3506
Max
−1.7
Max
±10
100
135
3.0
20
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
μA
μA
nC
nC
pF
ns
ns
V
V
S
A
A
V