F25L32QA-100PAG ESMT [Elite Semiconductor Memory Technology Inc.], F25L32QA-100PAG Datasheet - Page 33

• Manufacturer Part Number: F25L32QA-100PAG
• Description: 3V Only 32 Mbit Serial Flash Memory with Dual and Quad
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
Absolute Maximum Stress Ratings
(Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (T
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. )
TABLE 9: AC CONDITIONS OF TEST
TABLE 10: OPERATING RANGE
TABLE 11: DC OPERATING CHARACTERISTICS
Elite Semiconductor Memory Technology Inc.
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
See Figures 34 and 35
Symbol
ELECTRICAL SPECIFICATIONS
Operating Supply Voltage
Ambient Operating Temperature
I
I
I
I
I
I
I
I
I
V
V
V
V
DDR1
DDR2
DDR3
DDR4
DDW
SB1
SB2
LI
LO
IL
IH
OL
OH
Parameter
Read Current
@ 33MHz
Read Current
@ 50MHz
Read Current
@ 86MHz
Read Current
@ 100MHz
Program and Erase Current
Standby Current
Deep Power Down Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Parameter
Standard
Dual
Quad
Standard
Dual
Quad
Standard
Dual
Quad
Standard
Dual
Quad
A
V
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
DD
L
L
= 15 pF for ≧75MHz
= 30 pF for ≦50MHz
(F
Symbol
CLK
0.7 x V
V
V
T
DD
Min
DD
(Preliminary)
> 50MHz)
A
-0.2
DD
Limits
Max
0.8
0.2
15
18
20
20
23
25
23
25
28
25
28
30
35
30
5
1
1
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
2.7 ~ 3.6
3.0 ~ 3.6
V
V
V
V
I
I
0 ~ 70
Value
CE =0.1 V
CE =0.1 V
CE =0.1 V
CE =0.1 V
CE =V
CE =V
CE =V
OL
OH
IN
OUT
DD
DD
=100 µA, V
=-100 µA, V
=GND to V
=V
=V
=GND to V
DD
DD
DD
DD
DD
, V
, V
Min
Max
DD
DD
DD
DD
IN
IN
/0.9 V
/0.9 V
/0.9 V
/0.9 V
=V
=V
DD
DD
DD
DD
, V
=V
DD
DD
=V
, V
Publication Date: Jan. 2009
Revision: 0.2
DD
DD
DD
DD
DD
DD
or V
or V
Test Condition
DD
Unit
DD
, SO=open
, SO=open
, SO=open
, SO=open
=V
℃
V
V
Min
Min
=V
SS
SS
DD
DD
Max
Max
F25L32QA
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