ADG779BKS Analog Devices, ADG779BKS Datasheet - Page 2

• Manufacturer Part Number: ADG779BKS
• Description: CMOS 1.8 V to 5.5 V/ 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 Package
• Manufacturer: Analog Devices

ADG779–SPECIFICATIONS
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Version, –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match Between
On-Resistance Flatness (R
Source OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
t
Break-Before-Make Time Delay, t
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
I
ON
OFF
DD
S
D
Channels (∆R
I
INL
, C
(OFF)
S
or I
(ON)
INH
ON
ON
)
)
INL
INH
S
D
2
(OFF)
, I
FLAT(ON)
S
(ON)
2
D
)
25 C
2 .5
5
0.75
± 0.01
± 0.01
0.005
14
3
8
–67
–87
–62
–82
200
7
27
0.001
B Version
1
(V
DD
–40 C to
+85 C
0 V to V
6
0.1
0.8
1.2
± 0.05
± 0.05
2.4
0.8
± 0.1
20
6
1
1.0
= 5 V
–2–
DD
10%, GND = 0 V)
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
µA typ
µA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
R
R
Test Circuit 6
R
R
Test Circuit 7
R
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5 V
S
S
S
DD
S
S
IN
L
S
L
S
L
S1
L
L
L
L
L
DD
= 0 V to V
= 0 V to V
= 0 V to V
= 4.5 V/1 V, V
= V
= 3 V, Test Circuit 4
= 3 V, Test Circuit 4
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= V
= 5.5 V
= 5.5 V
D
INL
S2
= 1 V, or V
= 3 V, Test Circuit 5
or V
L
L
L
L
L
DD
DD
DD
L
L
L
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz,
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz,
= 5 pF, Test Circuit 8
INH
, I
, I
, I
= 35 pF
= 35 pF
= 35 pF,
D
S
S
S
= 1 V/4.5 V,
= –10 mA,
= –10 mA
= –10 mA
S
= V
D
= 4.5 V,
REV. 0