TC58FVB321FT Toshiba Semiconductor, TC58FVB321FT Datasheet - Page 21

• Manufacturer Part Number: TC58FVB321FT
• Description: (TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
• Manufacturer: Toshiba Semiconductor

AC CHARACTERISTICS AND OPERATING CONDITIONS
READ CYCLE
t
t
t
t
t
t
t
t
t
BLOCK PROTECT
t
t
t
t
t
PROGRAM AND ERASE CHARACTERISTICS
t
t
t
t
SYMBOL
SYMBOL
SYMBOL
RC
ACC
CE
OE
CEE
OEE
OH
DF1
DF2
VPT
VPS
CESP
VPH
PPLH
PPW
PCEW
PBEW
EW
Read Cycle Time
Address Access Time
Output Data Hold Time
V
V
Auto-Program Time (Byte Mode)
Auto-Program Time (Word Mode)
Auto Chip Erase Time
Auto Block Erase Time
Erase/Program Cycle
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
CE Set-up Time
OE Hold Time
WE Low-Level Hold Time
ID
ID
Transition Time
Set-up Time
PRODUCT NAME
OUTPUT CAPACITANCE LOAD (C
PARAMETER
PARAMETER
PARAMETER
L
)
MIN
70





0
0
0
30pF
TC58FVT321/B321FT/XB-70,-10
MAX
70
70
30



25
25

-70
MIN
80





0
0
0
100pF
MIN
10




MAX
5

80
80
35



25
25
MIN
90





0
0
0
TYP.
MIN
100
0.7
11
50

30pF
4
4
4
4
8
2002-08-06 21/48
MAX
90
90
35
30
30




-10
MAX
MAX
300
300
710
MIN
100
10











0
0
0
100pF
MAX UNIT
100
100
40
30
30




Cycles
UNIT
UNIT
µs
µs
µs
µs
µs
µs
µs
s
s
ns
ns
ns
ns
ns
ns
ns
ns
ns