TC58FVB321FT Toshiba Semiconductor, TC58FVB321FT Datasheet - Page 39
TC58FVB321FT
Manufacturer Part Number
TC58FVB321FT
Description
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Manufacturer
Toshiba Semiconductor
Datasheet
1.TC58FVB321FT.pdf
(48 pages)
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Block Protect 2
BPA: Block Address and ID Read Address (A6, A1, A0)
ID Read Address = (0, 1, 0)
Yes
Command Second Bus Write Cycle
Command Third Bus Write Cycle
Command First Bus Write Cycle
Remove V
Protect Another Block?
Verify Block Protect
Reset Command
Set up Address
Block Protect 2
Block Protect 2
Wait for 100 µs
Block Protect 2
RESET = V
Block Protect
PLSCNT = 1
Data = 01H?
Wait for 4 µs
(XXXH/60H)
(XXXH/40H)
Addr. = BPA
(BPA/60H)
Complete
ID
Start
from RESET
Yes
No
ID
No
TC58FVT321/B321FT/XB-70,-10
Remove V
PLSCNT = PLSCNT + 1
Reset Command
PLSCNT = 25?
Device Failed
ID
from RESET
No
Yes
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