2SK3150S Hitachi Semiconductor, 2SK3150S Datasheet
2SK3150S
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2SK3150S Summary of contents
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Features Low on-resistance typ. DS High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK Silicon N Channel MOS FET High Speed Power Switching ...
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Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note ...
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Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics Drain to Source Voltage 500 100 30 10 ...
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Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.5 2.0 1.5 1.0 0 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 150 100 V = ...
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Body–Drain Diode Reverse Recovery Time 500 µs 200 25°C GS 100 0.1 0.3 Reverse Drain Current Dynamic Input Characteristics 200 ...
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Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test – 0.2 0.4 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50 ...
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Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin – c( (t) • ch ...
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Package Dimensions 10.2 ± 0.3 1.27 ± 0.2 1.2 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 8 4.44 ± 0.2 1.3 ± 0.2 10.2 ± 0.3 2.59 ± 0.2 1.2 ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...