2SK3150S Hitachi Semiconductor, 2SK3150S Datasheet - Page 6

• Manufacturer Part Number: 2SK3150S
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK3150(L),2SK3150(S)
6
Vin
15 V
20
16
12
8
4
0
Pulse Test
Source to Drain Voltage
0.2
Reverse Drain Current vs.
Source to Drain Voltage
V
Monitor
Avalanche Test Circuit
50
10 V
DS
V
Rg
GS
0.4
= 0, –5 V
5 V
0.6
D. U. T
I
Monitor
AP
V
L
0.8
SD
(V)
1.0
V
DD
0
V
DD
50
40
30
20
10
E
0
25
AR
I
=
AP
Channel Temperature Tch (°C)
Maximun Avalanche Energy vs.
Channel Temperature Derating
1
2
50
Avalanche Waveform
I
• L • I
D
AP
75
2
•
100
V
DSS
I
V
duty < 0.1 %
Rg > 50
V
AP
DD
DSS
V
– V
= 20 A
DS
125
= 50 V
V
DD
(BR)DSS
150